Transient suppression diode is also called the transient voltage suppressor (TransientVoltageSuppressor) referred to as TVS pipe, electrical characteristics of the TVS tube is made of P-N junction area, doping concentration and wafer resist decision. The capacity and the P-N junction area high inrush current is proportional to the. The protection of TVS is widely used in semiconductor and sensitive devices, usually used to protect the two levels of power and signal circuit, and electrostatic. The characteristics of fast response speed (PS), small volume, pulse power is larger, the clamp voltage low. The 10/1000 μ s pulse power from 400W to 30KW, pulse peak current from 0.52A to 544A; the breakdown voltage is from 6.8V to 550V series, circuit for the different voltage use.
????The main characteristic parameters:
????The back off state voltage (voltage) VRWM and reverse leakage current IR: back off state voltage (voltage) VRWM represents the highest voltage of TVS pipe is not conducted, in this voltage only very small reverse leakage current IR.
????Voltage test current through the IT when given the breakdown voltage of VBR:TVS, which is expressed markers of TVS tube turn-on voltage (P4SMA, P6SMB, 1.5SMC, P4KE, P6KE, 1.5KE series models in the digital is the breakdown voltage of the nominal value, other series of numbers is the reverse off state voltage value). The breakdown voltage of the TVS transistor with error within ± 5% (without "A" ± 10%).
????The pulse peak current IPP:TVS tube allows the peak current of 10/1000 μ S wave through the (peak current 8/20 μ S wave is about 5 times more than the current value), it may cause permanent damage. In the same series, the higher the breakdown voltage of peak current through the tube allows smalle.
????The maximum clamp voltage VC:TVS voltage through the pulse peak current of IPP at both ends of the.
????The pulse peak power of Pm: Pm pulse peak power is the product of 10/1000 μ S wave pulse peak current of IPP and maximum clamp voltage VC, namely Pm=IPP*VC.